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July 19, 2024
Technology

Exploring ROHM’s New Low-Leakage 100V Trench Schottky Diodes

Feb 17, 2024

In the ever-evolving landscape of semiconductor technology, ROHM Semiconductor has emerged as a pioneering force, introducing groundbreaking innovations that redefine efficiency and performance standards. In their latest endeavor, ROHM unveils a remarkable advancement in Schottky diodes, mainly targeting industrial and automotive applications. This article delves into the significance of ROHM’s new low-leakage 100V trench Schottky diodes and their impact on enhancing power efficiency.

Unveiling the Breakthrough:

ROHM’s latest creation encompasses a series of 100V breakdown Schottky barrier diodes (SBDs) engineered to deliver unparalleled reverse recovery time (try). This achievement is made possible by adopting a trench MOS structure, a proprietary innovation by ROHM that effectively addresses the trade-off between forward voltage (VF) and reverse leakage current (IR). By mitigating these inherent challenges, ROHM’s SBDs pave the way for enhanced efficiency and reliability in power supply and protection circuits across automotive, industrial, and consumer sectors.

Advancing Efficiency in Rectification:

A critical aspect of ROHM’s innovation lies in its ability to optimize rectification applications, particularly in high-speed switching scenarios. Traditionally, trench MOS structures have posed challenges in achieving optimal reverse recovery time, leading to increased power loss during switching operations. However, ROHM’s trench MOS design overcomes this limitation, achieving a class-leading try of 15ns while simultaneously reducing the loss by approximately 37%. This remarkable feat significantly reduces overall switching loss, thereby contributing to lower application power consumption and heightened efficiency.

Enhanced Performance in Automotive Applications:

The automotive industry benefits significantly from adopting ROHM’s new low-leakage 100V trench Schottky diodes. These advanced components find application in crucial systems such as LED headlamps and DC-DC converters in electric vehicles (EVs). With the propensity to generate heat is a prevalent concern in automotive electronics, the superior thermal characteristics of ROHM’s SBDs mitigate the risk of thermal runaway, ensuring reliable performance even in demanding operating conditions.

Striving for Continuous Improvement:

As pioneers in semiconductor technology, ROHM Semiconductor remains committed to advancing the quality and performance of its products. The company aims to refine its semiconductor devices across various voltages, catering to diverse application requirements. ROHM continues to spearhead innovations that drive efficiency and reliability in semiconductor technologies by bolstering its product lineup and fostering greater miniaturization.

In conclusion, ROHM’s introduction of low-leakage 100V trench Schottky diodes marks a significant milestone in semiconductor innovation. Through the strategic integration of trench MOS structures, ROHM has succeeded in elevating the efficiency and performance standards in power supply and protection circuits. As industries prioritize energy efficiency and reliability, ROHM’s groundbreaking SBDs emerge, heralding a new era of advancement and opportunity in semiconductor technology.

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